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New. New Book; Fast Shipping from UK; Not signed; Not First Edition; General Features and Fundamental Concepts.- Particle Interactions.- Dynamics of Binary Elastic Collisions.- Cross-Section.- Ion Stopping.- Ion Range and Range Distribution.- Displacements and Radiation Damage.- Channeling.- Doping, Diff
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Ion Implantation and Synthesis of Materials Paperback - 2010
by Michael Nastasi; James W. Mayer
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From the rear cover
Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
Details
- Title Ion Implantation and Synthesis of Materials
- Author Michael Nastasi; James W. Mayer
- Binding Paperback
- Edition Softcover reprin
- Pages 263
- Volumes 1
- Language ENG
- Publisher Springer
- Date 2010-02-12
- ISBN 9783642062599 / 3642062598
- Weight 0.87 lbs (0.39 kg)
- Dimensions 9.21 x 6.14 x 0.59 in (23.39 x 15.60 x 1.50 cm)
- Dewey Decimal Code 620.11
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Ion Implantation and Synthesis of Materials
by Michael Nastasi
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- 9783642062599 / 3642062598
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Ion Implantation and Synthesis of Materials
by Nastasi, Michael
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- ISBN 10 / ISBN 13
- 9783642062599 / 3642062598
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paperback. Good. Access codes and supplements are not guaranteed with used items. May be an ex-library book.
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$135.65
FREE shipping to USA